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TA2151FN 2003-01-16 1 toshiba bipolar linear integrated circuit silicon monolithic TA2151FN rf amplifier for digital servo cd system TA2151FN is a 3-beam type puh compatible rf amplifier for digital servo to be used in the cd system. in combination with a cmos single chip processor tc9462f/tc9495f, a cd system can be composed very simply. features built-in amplifier for reference (vro, 2vro) supply. built-in auto laser power control circuit. built-in rf amplifier. built-in agc amplifier. built-in focus error amp and tracking error amp. built-in gain change circuit for cd-rw. capable of tracking balance control with tc9462f/tc9495f. built-in signal amplifier for track counter. capable of 4 times speed operation. 30 pin mini flat package. weight: 0.17 g (typ.)
TA2151FN 2003-01-16 2 block diagram ldc gvsw mode seb bottom detect peak detect sel sw1 sw2 sw3 rfrp detect frequency gnd cd-rw gnd gnd on off off hiz hiz on hiz low v cc normal v cc off on v cc off on on high bottom peak vrin 3 state det. feo fen 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 seb vro rfrp rfct pkc rfrpin rfgo gvsw agcin rfo gnd rfn2 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 rfgc v cc fni fpi tpi tni mdi ldo sel teb 2vro ten teo rfdc agc amp. bottom detection i-i i-i 0.5 pf 20 k 3 pf 30 k 20 k 10 k 10 k 3 pf 30 k 10 pf 10 pf 150 k 56.4 k 56.4 k 150 k 40 pf 60 k 40 pf 20 k 20 k 20 k 20 k 12 k 12 k 11 k 100 100 k 100 k 11 k 20 k 12.8 k 12.8 k 48 k 21.82 k 83 k 2.9 k 1 k 1.4 k 13 k 2.26 k 189 k 15 pf 189 k 15 pf 3 k 3 k 60 k 60 k 20 k btc
TA2151FN 2003-01-16 3 pin function pin no. symbol i/o functional description remarks 1 v cc power supply input terminal. 2 rfgc i rf amplitude adjustment control signal input terminal. controlled by 3-pwm signals. (pwm carrier 88.2 khz) rfgc input voltage: vro 1.5 v agc amplifier voltage again: 0.7~1.5 (typ.) 3 vrin i agc amp. reference voltage input terminal. connected to vro 4 fni i main beam i-v amp input terminal. connected to pin diode output b d (through resistor). 5 fpi i main beam i-v amp input terminal. connected to pin diode output a c (through resistor). 6 tpi i sub beam i-v amp input terminal. connected to pin diode output f. 7 tni i sub beam i-v amp input terminal. connected to pin diode output e. 8 mdi i monitor photo diode amp input terminal. connected to monitor photo diode. 9 ldo o laser diode amp input terminal. connected to laser diode control circuit. 10 sel i laser diode control signal input terminal and apc circuit on/off control signal terminal. sel level apc circuit ldo detect frequency gnd off connected to v cc through resister (1 k ) hiz low v cc on control signal output high 3 signals input. (v cc , hiz, gnd) 11 teb i tracking error balance adjustment signal input terminal. controlled by 3-pwm signal. (pwm carrier 88.2 khz) 3 signals input. (2vro, vro, gnd) 12 2vro o reference voltage (2vro) output terminal. 2vro 4.2 v when v cc 5 v 13 ten i te amp negative input terminal. connected to teo through feedback resistor. 14 teo o te error signal output terminal. 15 rfdc o rf signal peak detect output terminal. 16 feo o focus error signal output terminal. 17 fen i fe amp negative input terminal. connected to feo through feedback resistor. 18 seb i rfrp output circuit switching terminal. seb level bottom detection peak detection gnd on v cc off on low (gnd) is for normal use. 19 vro o reference voltage (vro) output terminal. vro 2.1 v when v cc 5 v
TA2151FN 2003-01-16 4 pin no. symbol i/o functional description remarks 20 rfrp o track count signal output terminal. 21 btc i time constant adjustment terminal for bottom detection. adjusted by capacitance. 22 rfct o rfrp signal center level output terminal. 23 pkc i time constant adjustment terminal for peak detection. adjusted by capacitance. 24 rfrpin i input terminal for track count signal output amp. 25 rfgo o output terminal for rf signal amplitude adjustment amp. 26 gvsw i amp (fe, te) gain switching terminal. gvsw mode gnd cd-rw hiz v cc normal low (gnd) is for 5 times gain. 27 agcin i input terminal for rf signal amplitude adjustment amp. connected to rfo through capacitance. 28 rfo o output terminal for rf signal amp. 29 gnd ground terminal. 30 rfn2 i input terminal for rf signal amp. maximum ratings (ta 25c) characteristics symbol rating unit power supply voltage v cc 8 v power dissipation p d 500 mw operating temperature t opr 40~85 c storage temperature t stg 55~150 c
TA2151FN 2003-01-16 5 electrical characteristics (unless otherwise specified, v cc 5 v, ta 25c, rfgc v cc , gvsw v cc ) characteristics symbol test circuit test condition min typ. max unit assured power supply voltage v cc 4.5 5.0 5.5 v power supply current 1 (normal mode) i cc 1 gvsw v cc power supply power supply current 2 (cd-rw mode) i cc 2 sel hiz regc hiz gvsw gvd 23 33 43 ma reference voltage 2vr 4.0 4.2 4.4 v output current i oh2 v 0.2 v 2.0 reference voltage (2vro) input current i ol2 v 0.1 v 0.1 ma reference voltage vr 2.0 2.1 2.2 v reference voltage limit vr 2 vr/2vr 1 3.0 0.0 % output current i oh1 v 0.2 v 5.0 reference voltage (vro) input current i ol1 v 0.1 v 5.0 ma transfer resistance1 (normal mode) r t1 gvsw v cc 153 180 207 transfer resistance2 (cd-rw mode) r t2 f 100 khz rf = 20 k gvsw gnd 690 812 934 k frequency band width1 (normal mode) fc1 gvsw v cc 8 frequency band width2 (cd-rw mode) fc2 3db point rf = 20 k gvsw gnd 8 mhz output slew rate sr c rfo 20 pf 20 v/
s output offset voltage 1 (normal mode) v os1 gvsw v cc 50 output offset voltage 2 (cd-rw mode) v os2 vr reference rf = 20 k input: open gvsw gnd 100 mv upper limit output voltage v oh 3.8 lower limit output voltage v ol gnd reference 0.9 v rf1 permissive load resistance r lm 10 k lower limit voltage gain g vl rfgc 0.6 v 0.6 0.7 0.8 upper limit voltage gain g vh f 100 khz rfgc 3.6 v 1.3 1.5 1.7 v/v frequency band width fc 3db point 20 mhz output slew rate sr c rfo 20 pf 20 v/
s output offset voltage v os vr reference, input: open 100 mv upper limit output voltage v oh 3.8 lower limit output voltage v ol gnd reference 0.9 v rf2 (agc) permissive load resistance r lm 10 k voltage gain gv f 1 khz 200 v/v operation ref. voltage v mdi v ldo 3.5 v dc 170 178 192 mv ld off voltage v ldop sel gnd, v cc reference 0.7 v apc input bias current i i mdi 178 mv 200 200 na
TA2151FN 2003-01-16 6 characteristics symbol test circuit test condition min typ. max unit transfer resistance 1 (normal mode) r t1 gvsw v cc 197 232 267 k transfer resistance 2 (cd-rw mode) r t2 f 1 khz r nf 91 k gvsw gnd 0.89 1.05 1.20 m gain balance 1 (normal mode) gb1 gvsw v cc 1.0 1.0 gain balance 2 (cd-rw mode) gb2 f 1 khz r nf 91 k gvsw gnd 1.0 1.0 db frequency band width1 (normal mode) fc1 gvsw v cc 26.5 frequency band width2 (cd-rw mode) fc2 3db point r nf = 91 k gvsw gnd 26.5 khz output offset voltage 1 (normal mode) v os1 gvsw v cc 20 20 output offset voltage 2 (cd-rw mode) v os2 r nf 91 k vr reference gvsw gnd 50 50 mv upper limit output voltage v oh 3.8 lower limit output voltage v ol gnd reference 0.5 v fe permissive load resistance r lm 10 k transfer resistance 1 (normal mode) r t1 gvsw v cc 1.81 2.13 2.45 transfer resistance 2 (cd-rw mode) r t2 f 1 khz r nf = 75 k teb hiz gvsw gnd 8.15 9.59 11.02 m max voltage ratio teb gnd 45 voltage gain adjustable range min voltage ratio gv t ni input r nf = 75 k teb vr reference teb 2vr 45 % gain balance 1 (normal mode) gb1 gvsw v cc 1.0 1.0 gain balance 2 (cd-rw mode) gb2 f 1 khz r nf = 75 k teb vr gvsw gnd 1.0 1.0 db frequency band width1 (normal mode) fc1 gvsw v cc 44 frequency band width2 (cd-rw mode) fc2 3db point r nf = 75 k gvsw gnd 44 khz output offset voltage 1 (normal mode) v os1 gvsw v cc 80 80 output offset voltage 2 (cd-rw mode) v os2 r nf = 75 k vr reference gvsw gnd 300 300 mv upper limit output voltage v oh 3.8 lower limit output voltage v ol gnd reference 0.5 v te permissive load resistance r lm 10 k detection frequency f c 40 khz upper limit output voltage v oh 3.3 lower limit output voltage v ol gnd reference 0.9 v rfdc fni (fpi) rfdc permissive load resistance r lm 10 k
TA2151FN 2003-01-16 7 characteristics symbol test circuit test condition min typ. max unit voltage gain gv 1.7 v/v detection frequency characteristic 1 fc1 sel hiz 100 detection frequency characteristic 2 fc2 sel v cc 200 khz operation reference voltage 1 v opr1 vr reference no input 1.1 1.0 0.9 operation reference voltage 2 v opr2 vr reference 700 khz, 1.2 vp-p 0.7 0.8 0.9 v rfrp permissive load resistance r lm 10 k detection frequency characteristic 1 fc1 c btc 0.22
f 70 detection frequency characteristic 2 fc2 c pkc 0.22
f 70 hz rfct rfrp rfct output offset voltage v os rfrp reference, rfct 50 50 mv note: if the ic is used abnormally (ex. wrongly mounted), it may be dameged or destroyed.
TA2151FN 2003-01-16 8 test circuit bottom peak vrin fen 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 btc pkc gvsw gnd rfn2 15 14 13 12 11 10 9 8 7 6 5 4 3 2 v cc mdi ten agc amp. bottom detection i-i i-i 0.5 pf 20 k 3 pf 30 k 20 k 10 k 10 k 3 pf 30 k 10 pf 10 pf 150 k 56.4 k 56.4 k 150 k 40 pf 60 k 40 pf 20 k 20 k 20 k 20 k 12 k 12 k 11 k 100 100 k 100 k 11 k 20 k 12.8 k 12.8 k 48 k 21.82 k 83 k 2.9 k 1 k 1.4 k 13 k 2.26 k 189 k 15 pf 189 k 15 pf 3 k 3 k 60 k 60 k 20 k 3 state det. 0.1 f 20 k ldo 0.1 f 47 f vro 20 k 9.1 k 9.1 k 0.22 f 0.22 f 9.1 k 91 k feo seb rfrp rfct rfrpin rfgo agcin rfo 1 75 k 9.1 k 9.1 k rfdc teo 0.1 f 47 f sel teb 2vro 180 k 180 k 47 k 47 k tni fni fpi tpi 100 f rfgc 0.1 f 100 f 9.1 k 2.4 k
TA2151FN 2003-01-16 9 package dimensions weight: 0.17 g (typ.)
TA2151FN 2003-01-16 10 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the products described in this document are subject to the foreign exchange and foreign trade laws. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707eb a restrictions on product use

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